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| 홈>제품정보>반도체분야 |
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| 구 분 |
E720 |
E760 |
| 기판 사이즈 |
6 to 8 inch |
| Residence time |
0.016 s |
| Source |
Advanced ICP |
| 용 도 |
WSi, Poly-Si, Si, Silicide,
S trench, SiO2, SiN, GaAs 등 |
TiN, Al-Si-Cu, TiN, Al, Al-Cu |
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